Date of Award
12-1990
Document Type
Thesis
Degree Name
Master of Science
Department
Department of Engineering Physics
First Advisor
Robert L. Hengehold, PhD
Abstract
Lifetime measurements of the excited states of three GaAs semiconductors doped with the rare earth elements Erbium (ER), Praseodymium (Pr) , and Thulium (Tm) has been studied using a pulsed nitrogen laser and germanium detector. The measurements were made with an experimental set up with a system response time of 0.34 micro seconds. A 330 milliwatt nitrogen laser with a wavelength of 3370 angstrums was used to excite transitions of the rare earth elements.
AFIT Designator
AFIT-GEP-ENP-90D-9
DTIC Accession Number
ADA229865
Recommended Citation
Topp, Danny J., "Fluorescent Lifetime Measurements of Rare Earth Elements in Gallium Arsenide" (1990). Theses and Dissertations. 8033.
https://scholar.afit.edu/etd/8033