Date of Award

9-1993

Document Type

Thesis

Degree Name

Master of Science

Department

Department of Engineering Physics

First Advisor

Robert L. Hengehold, PhD

Second Advisor

Yung K. Yeo, PhD

Third Advisor

Paul H. Ostdeik, PhD

Abstract

Zinc germanium diphosphide (ZnGeP2) is a chalcopyrite semiconductor with strong nonlinear optical properties and potential application to Air Force interests. The characteristics of this material have been studied using photoluminescence (PL) spectroscopy. The PL spectrum is dominated by transitions from the conduction band to a deep acceptor level, and features in the spectrum suggest that more than one transition is being observed. The PL is partially polarized, and the degree of polarization appears to differ for each feature in the spectrum. The relative PL intensity of these features are seen to depend upon the wavelength of the excitation source in a fashion which suggests that the observed transitions may originate from three separate conduction bands. These experimentally observed results are found to agree qualitatively with the published band structure of ZnGeP2.

AFIT Designator

AFIT-GAP-ENP-93S-01

DTIC Accession Number

ADA270705

Comments

The author's Vita page is omitted.

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