Luminescence Study of Ion-Implanted and MBE-Grown Er-Doped GaAs and Al_xGa_1-xAs

Author

Jose E. Colon

Date of Award

3-1993

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

Department

Department of Engineering Physics

First Advisor

Yung Kee Yeo, PhD

Second Advisor

Robert L. Hengehold, PhD

Abstract

The excitation and de-excitation mechanisms of the 1.54 microns emissions, from ion implanted and MBE grown GaAs:Er and Al_xGa_1-xAs:Er, were studied through luminescence experiments. Experimental techniques included photoluminescence, time resolved photoluminescence, and selective excitation photoluminescence. The Er³⁺ emissions were studied as a function of Er concentration, aluminum mole friction, n- and p-type doping level, and annealing temperature. In addition oxygen co-doping studies were done in order to determine the role played by oxygen in the Er³⁺ luminescence.

AFIT Designator

AFIT-DS-ENP-93-01

DTIC Accession Number

ADA262602

Comments

Plain-text title form: Luminescence Study of Ion-Implanted and MBE-Grown Er-Doped GaAs and Al(x)Ga(1-x)As

The author's Vita page is omitted.

Recommended Citation

Colon, Jose E., "Luminescence Study of Ion-Implanted and MBE-Grown Er-Doped GaAs and Al_xGa_1-xAs" (1993). Theses and Dissertations. 6882.
https://scholar.afit.edu/etd/6882