Date of Award

12-1992

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

Department

Department of Engineering Physics

First Advisor

Yung Kee Yeo, PhD

Second Advisor

Robert L. Hengehold, PhD

Abstract

Electrical and optical characterization have been performed on GaAs and AlxGa1-xAs samples doped with Er either by ion implantation or during Molecular Beam Epitaxial (MBE) growth. Deep Level Transient Spectroscopy (DLTS) and Temperature-Dependent Hall Effect (TDH) measurements indicated the presence of two hole traps in Er-doped GaAs, at 35 and 360 meV above the valence band maximum. The former (shallower) center was thought to be due to Er substituting for a Ga atom (ErGa) and giving rise to an isoelectronic impurity potential. The second center was attributed to an Er atom occupying an interstitial position (Eri). Annealing studies performed on Er-implanted GaAs indicated that the ErGa center preferentially formed at higher annealing temperatures ( > 850°C), with the Eri reaching a maximum concentration at an annealing temperature of around 750°C. Optical characterization performed by Photoluminescence (PL) measurements showed that the Eri center gave a much stronger Er-related intra-4f shell emission. Mechanisms for the excitation of the 4f shells of these two centers are discussed. Similar optically active Eri centers may be forming in AlGaAs.

AFIT Designator

AFIT-DS-ENP-92-05

DTIC Accession Number

ADA258814

Comments

The author's Vita page is omitted.

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