A Physics-Based Heterojunction Bipolar Transistor Model for Integrated Circuit Simulation

Author

James A. Fellows

Date of Award

12-1993

Document Type

Thesis

Degree Name

Master of Science

Department

Department of Electrical and Computer Engineering

First Advisor

Victor M. Bright, PhD

Abstract

The purpose of this research effort was to derive a physics-based dc model for a Heterojunction Bipolar Transistor HBT. The dc model was then linearized to arrive at a small-signal model that accurately predicts the devices electrical behavior at microwave frequencies. This new model offers features not found in previous analytical or physics-based HBT models such as consideration of a cylindrical emitter-base geometry and is direct implementation into SPICE Simulation Program with Integrated Circuit Emphasis. The device model parameters were determined from a knowledge of the device material, geometry, and fabrication process. The model was then developed by using semiconductor physics to calculate modified parameters for the existing SPICE bipolar junction transistor BJT model.

AFIT Designator

AFIT-GE-ENG-93D-07

DTIC Accession Number

ADA274081

Comments

The author's Vita page is omitted.

Recommended Citation

Fellows, James A., "A Physics-Based Heterojunction Bipolar Transistor Model for Integrated Circuit Simulation" (1993). Theses and Dissertations. 6696.
https://scholar.afit.edu/etd/6696