Electrical Properties of p-Type GaInP₂

Author

Roy S. Calfas

Date of Award

12-1993

Document Type

Thesis

Degree Name

Master of Science

Department

Department of Engineering Physics

First Advisor

Yung Kee Yeo, PhD

Abstract

The GaInP₂ n⁺—p junction diode has recently become important to the development of high efficiency GaInP₂GaAs dual junction solar cells, which have a demonstrated air mass 1.5 conversion efficiencies in excess of 27. In order to study the effects of long term exposure to the space environment, the GaInP₂ n+—p junction diodes were irradiated with a 1 MeV electron beam with a fluence of 10¹⁶ electrons/cm². Since little is known about deep level defects traps in GaInP₂, a deep level transient spectroscopy DLTS study was made to characterize the traps that are thought to dominate the dark current in GaInP₂ solar cells. The measurements indicated that there are a number of majority carrier traps in the p-type base of the GaInP₂ n⁺—p junction diode. Traps that are identified are located 0.12 to 0.55 eV above the valence band and are attributed to phosphorous vacancies in the lattice.

AFIT Designator

AFIT-GAP-ENP-93D-01

DTIC Accession Number

ADA273771

Comments

The author's Vita page is omitted.

Recommended Citation

Calfas, Roy S., "Electrical Properties of p-Type GaInP₂" (1993). Theses and Dissertations. 6641.
https://scholar.afit.edu/etd/6641