Date of Award


Document Type


Degree Name

Master of Science


Department of Engineering Physics

First Advisor

Yung Kee Yeo, PhD


This work involves an investigation of GaInP2 n+p diode and solar cell dark current mechanisms, the defect centers that affect these mechanisms, and the response of dark current and solar cell photovoltaic parameters to I MeV electron irradiation and thermal annealing. Dark current due to carrier diffusion, recombination, and tunneling were identified, and recombination current was found to dominate at the maximum power-point voltage of the GaInP2 solar cells. Carrier recombination was found to occur via defect centers at the perimeter and within the bulk of the junction. Two deep majority-hole trap centers were found at Ea1 = Et - Ev ≈ 0.45eV and Ea2 = Et- Ev ≈ 0.05eV. Dark current due to carrier tunneling was dominant in 'leaky' diodes and solar cells that contained line- like morphological defects believed to be due to lattice mismatch between GaInP2 and GaAs. The effects of 1 MeV electron irradiation and thermal annealing on solar cell and diode dark current mechanisms and efficiency were also studied.

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The author's Vita page is omitted.

Plain-text title form: The Junction Characteristics and Current Conduction Mechanisms of GaInP2n+p Diodes and Solar Cells