The Junction Characteristics and Current Conduction Mechanisms of GaInP₂ n⁺p Diodes and Solar Cells

Author

Kitt C. Reinhardt

Date of Award

12-1994

Document Type

Dissertation

Degree Name

Master of Science

Department

Department of Engineering Physics

First Advisor

Yung Kee Yeo, PhD

Abstract

This work involves an investigation of GaInP₂ n⁺p diode and solar cell dark current mechanisms, the defect centers that affect these mechanisms, and the response of dark current and solar cell photovoltaic parameters to I MeV electron irradiation and thermal annealing. Dark current due to carrier diffusion, recombination, and tunneling were identified, and recombination current was found to dominate at the maximum power-point voltage of the GaInP2 solar cells. Carrier recombination was found to occur via defect centers at the perimeter and within the bulk of the junction. Two deep majority-hole trap centers were found at E_a1 = E_t - E_v ≈ 0.45eV and E_a2 = E_t- E_v ≈ 0.05eV. Dark current due to carrier tunneling was dominant in 'leaky' diodes and solar cells that contained line- like morphological defects believed to be due to lattice mismatch between GaInP₂ and GaAs. The effects of 1 MeV electron irradiation and thermal annealing on solar cell and diode dark current mechanisms and efficiency were also studied.

AFIT Designator

AFIT-WSF-ENP-94-05

DTIC Accession Number

ADA290857

Comments

The author's Vita page is omitted.

Plain-text title form: The Junction Characteristics and Current Conduction Mechanisms of GaInP2n+p Diodes and Solar Cells

Recommended Citation

Reinhardt, Kitt C., "The Junction Characteristics and Current Conduction Mechanisms of GaInP₂ n⁺p Diodes and Solar Cells" (1994). Theses and Dissertations. 6482.
https://scholar.afit.edu/etd/6482