Date of Award

7-1995

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

Department

Department of Electrical and Computer Engineering

First Advisor

Victor M. Bright, PhD

Abstract

The p-channel In0.52Al0.48As-GaAs1-xSbx heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In0.52Al0.48As-GaAs1-xSbx p-HIGFET requires improved source-drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In0.52Al0.48As-GaAs0.51Sb0.49 HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped In0.52Al0.48. Third, high acceptor concentrations were obtained on GaAs1-xSbx using beryllium ion implantation. Fourth, Au-Zn-Au and Ti-Pt-Au were compared as ohmic contact metallizations to these highly doped layers. Finally, In0.52Al0.48As-GaAs0.51Sb0.49 HIGFETs were fabricated and characterized using Ti-Pt-Au metallization and Be implantation. An array of characterization methods were employed to thoroughly characterize materials and devices including: transmission line measurements (TLM), electrochemical profiling, photoluminescence (PL), atomic force microscopy (AFM), secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), cross-sectional transmission electron microscopy (XTEM), selected area diffraction (SAD) and energy dispersive X-ray analysis (EDX).

AFIT Designator

AFIT-DSG-ENG-95S-03

DTIC Accession Number

ADA297604

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