Photoluminescence and Electroluminescence of Erbium and Neodymium Implanted Semiconductors

Author

James R. Hunter

Date of Award

12-1995

Document Type

Thesis

Degree Name

Master of Science

Department

Department of Engineering Physics

First Advisor

Yung Kee Yeo, PhD

Second Advisor

Robert L. Hengehold, PhD

Abstract

Low temperature photoluminescence (PL) and electroluminescence (EL) measurements were used to study the excitation of erbium- and neodymium-implanted GaAs and Al_xGa_1-xAs (x=0. 1, 0.3) pn-junctions. The rare-earth (RE) emissions were investigated as a function of ion dose, aluminum mole fraction, laser excitation power, and applied forward bias voltage for the implanted samples. Low temperature PL was also measured from Er doped silicon grown by the metalorganic chemical vapor-phase deposition (MOCVD) method using various growth parameters.. The MOCVD-grown Si samples were studied as a function of metalorganic source temperature, silane (SiH₄) flow, growth time, and hydrogen presence during growth.

AFIT Designator

AFIT-GAP-ENP-95D-09

DTIC Accession Number

ADA303289

Comments

Co-advised thesis.

Recommended Citation

Hunter, James R., "Photoluminescence and Electroluminescence of Erbium and Neodymium Implanted Semiconductors" (1995). Theses and Dissertations. 6132.
https://scholar.afit.edu/etd/6132