Date of Award
3-2001
Document Type
Thesis
Degree Name
Master of Science
Department
Department of Engineering Physics
First Advisor
Glen P. Perram, PhD
Abstract
Temporally-resolved laser induced fluorescence ofhigh vibrational levels in Bi2 A(0+u) above and below the predissociation limit of v'=22 were investigated by observing total fluorescence from a wavelength tunable, pulsed dye laser. Electronic quenching ofBi2 A(0+u) by five collision partners (Ne, Ar, Kr, Xe, N2) was examined for four vibrational levels (v'=22,23,24,25). Electronic quenching by a sixth collision partner (He) was examined for eight vibrational levels (v'=18 through 25). The quenching from stable vibrational levels (v'≤22) was independent ofvibrational quantum number. A significant increase in quenching occurs for the predissociated level v'=23. Electronic quenching transfer rates ranged from 227.3 to 850.5x10-13 cm3 molec-1 sec-1 for v'=22 and from 741.2 to 1570x10-13 cm3 molec-1 sec-1 for v'=23, and are very nearly gas kinetic for v'=23. Electronic quenching ofhigher vibrational levels (v'>23) was not temporally resolvable by the experimental apparatus.
AFIT Designator
AFIT-GAP-ENP-01M-02
DTIC Accession Number
ADA392555
Recommended Citation
Cox, Joseph L., "Electronic Quenching of the A(0+u) State of Bi2" (2001). Theses and Dissertations. 4593.
https://scholar.afit.edu/etd/4593
Comments
Plain-text title: Electronic Quenching of the A(0+u) State of Bi2