Date of Award
Doctor of Philosophy (PhD)
Department of Engineering Physics
James C. Petrosky, PhD
The nature of native donors in GaN, types and interactions of radiation-induced defects, and damage creation coefficients for 1.0 MeV electron irradiation have been ascertained by the concerted application of electron paramagnetic resonance spectroscopy and Hall effect measurements to virgin and electron-irradiated GaN epilayers. Samples produced via molecular beam epitaxy and hydride vapor phase epitaxy, both silicon doped and nominally undoped, were subjected to Van de Graff generator produced monoenergtic electron beams with total fluences of 1016- 1018 electrons/cm2. Nitrogen vacancies are rejected as a possible cause of n-type conductivity in nominally undoped GaN due to the decrease of shallow donor populations following irradiation. Damage constants for a donor-defect complex formation or defect compensation are found to be approximately 0.15 cm-1. Identification by resolved hyperfine splitting is accomplished for radiation-induced Ga interstitial complexes.
DTIC Accession Number
Greene, Kevin D., "Electron Paramagnetic Resonance Spectroscopy and Hall Effect Studies of the Effects of Low Energy Electron Energy on Gallium Nitride (GAN)" (2003). Theses and Dissertations. 4138.