Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors

Author

Brian P. Feller

Date of Award

3-2005

Document Type

Thesis

Degree Name

Master of Science

Department

Department of Engineering Physics

First Advisor

Yung Kee Yeo, PhD

Abstract

Thin films of GaN, Al_0.1Ga_0.9N, and ZnO were implanted with Cr, Mn, and nickel Ni to produce dilute magnetic semiconductors. Optical and magnetic techniques were used to evaluate crystal structure restoration and coercive field strength as a function of implant species and annealing temperature. Maximum crystal restoration was obtained for Al_0.1Ga_0.9N after annealing at 675 °C; for Cr implanted p-GaN after annealing at 750 °C; for Mn or Ni implanted p-GaN after annealing at 675 °C; for Cr implanted ZnO after annealing at 700 °C; for Mn implanted ZnO after annealing at 675 °C; and for Ni implanted ZnO after annealing at 650 °C. Maximum coercive field strengths were found for Cr implanted Al_0.1Ga_0.9N after annealing at 750 °C; for Mn implanted Al_0.1Ga_0.9N after annealing at 675 °C; for Ni implanted Al_0.1Ga_0.9N after annealing at 700 °C; for Cr or Mn implanted p-GaN after annealing at 725 °C; for Ni implanted p-GaN after annealing at 675 °C; for Cr or Ni implanted ZnO after annealing at 725 °C; and for Mn implanted ZnO after annealing at 725 °C. Optimum annealing conditions for optical and magnetic properties of the implanted wide band gap semiconductors agree with each other very well.

AFIT Designator

AFIT-GEO-ENP-05-02

DTIC Accession Number

ADA434194

Recommended Citation

Feller, Brian P., "Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors" (2005). Theses and Dissertations. 3732.
https://scholar.afit.edu/etd/3732