Date of Award
Master of Science
Department of Engineering Physics
Michael A. Marciniak, PhD
Infrared absorption and photoluminescence measurements have been used to optically characterize bulk-grown, 680-μm thick, indium antimonide (InSb), both as-grown and after passivation by either anodization or a 700-Å layer of silicon oxide (SiOx). Spectra were obtained using Fourier transform infrared (FT-IR) spectroscopy. Results include the effects of sample temperature in the range of 10 to 300 K and 4.636 μm laser pump power in the range of 28 mW to 1.43 W for the photoluminescence spectrum.
DTIC Accession Number
Taylor, Catherine Ann, "Characterization of Passivated Indium Antimonide" (2006). Theses and Dissertations. 3368.