Date of Award
6-6-2006
Document Type
Thesis
Degree Name
Master of Science
Department
Department of Engineering Physics
First Advisor
Michael A. Marciniak, PhD
Abstract
Infrared absorption and photoluminescence measurements have been used to optically characterize bulk-grown, 680-μm thick, indium antimonide (InSb), both as-grown and after passivation by either anodization or a 700-Å layer of silicon oxide (SiOx). Spectra were obtained using Fourier transform infrared (FT-IR) spectroscopy. Results include the effects of sample temperature in the range of 10 to 300 K and 4.636 μm laser pump power in the range of 28 mW to 1.43 W for the photoluminescence spectrum.
AFIT Designator
AFIT-GEO-ENP-06-03
DTIC Accession Number
ADA454283
Recommended Citation
Taylor, Catherine Ann, "Characterization of Passivated Indium Antimonide" (2006). Theses and Dissertations. 3368.
https://scholar.afit.edu/etd/3368