Date of Award

3-26-2020

Document Type

Thesis

Degree Name

Master of Science in Electrical Engineering

Department

Department of Electrical and Computer Engineering

First Advisor

Tod V. Laurvick, PhD

Abstract

The DoD requires a variety of COTS and number of custom microelectronics to provide important functionality to critical military systems. Photolithography and DRIE are two techniques commonly used in the development of deep anisotropic features for the fabrication and modification of microelectronics and MEMS. However, standard photolithography techniques are ineffective for unique substrate geometries and DRIE processes require a chemical passivation step only applicable to Si substrates. This work confirmed the capability of RIE using DWL to perform deep, highly selective, anisotropic etching on elevated, non-circular substrates.

AFIT Designator

AFIT-ENG-MS-20-M-041

Share

COinS