Date of Award
3-26-2020
Document Type
Thesis
Degree Name
Master of Science in Electrical Engineering
Department
Department of Electrical and Computer Engineering
First Advisor
Tod V. Laurvick, PhD
Abstract
The DoD requires a variety of COTS and number of custom microelectronics to provide important functionality to critical military systems. Photolithography and DRIE are two techniques commonly used in the development of deep anisotropic features for the fabrication and modification of microelectronics and MEMS. However, standard photolithography techniques are ineffective for unique substrate geometries and DRIE processes require a chemical passivation step only applicable to Si substrates. This work confirmed the capability of RIE using DWL to perform deep, highly selective, anisotropic etching on elevated, non-circular substrates.
AFIT Designator
AFIT-ENG-MS-20-M-041
DTIC Accession Number
AD1103218
Recommended Citation
Martin-Abood, Dylan T., "Characterization of Reactive Ion Etch Chemistries Using Direct Write Lithography" (2020). Theses and Dissertations. 3181.
https://scholar.afit.edu/etd/3181
Included in
Electro-Mechanical Systems Commons, Electronic Devices and Semiconductor Manufacturing Commons