Date of Award

3-2008

Document Type

Thesis

Degree Name

Master of Science

Department

Department of Engineering Physics

First Advisor

Michael A. Marciniak, PhD

Abstract

Mid-Wave Infrared (MWIR) semiconductors are of use to the Air Force for several applications. Ultrafast spectroscopy can be used to better quantify the effectiveness of semiconductor opto-electronic devices. The objective of this thesis was to improve the procedure for taking ultrafast, time-resolved measurements of photoluminescence from MWIR semiconductors. Previous work has used a mode-locked titanium sapphire (Ti:Saph) laser to excite the semiconductor sample and to upconvert the photoluminescence from the semiconductor. Work completed in this thesis improved on the techniques developed during previous work. A synchronous Optical Parameter Oscillator (OPO) will be used to convert the Ti:Saph laser (0.830 µm) into 1.3-µm signal and 2.3-µm idler beams. Whereas the Ti:Saph reference and signal beams were too energetic to excite the quantum well (QW) layers of certain MWIR opto-electronic semiconductor structures, the synchronous OPO allows investigation of the active layer by directly exciting the QWs. Photoluminescence was detected from an indium arsenide antimonide (InAsSb) sample with a peak wavelength of 3.8 µm. A detailed procedure for setup of the TRPL experiment using the synchronous OPO is provided.

AFIT Designator

AFIT-GAP-ENP-08-M02

DTIC Accession Number

ADA481054

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