Gadolinium Oxide/Silicon Thin Film Heterojunction Solid-State Neutron Detector

Author

Christopher M. Young

Date of Award

3-10-2010

Document Type

Thesis

Degree Name

Master of Science in Nuclear Engineering

Department

Department of Engineering Physics

First Advisor

John W. McClory, PhD.

Abstract

The internal conversion electron emission from the de-excitation of the Gd-158m nucleus was explored as a means for neutron detection. Thin film gadolinium oxide (Gd₂O₃) and p-type silicon heterojunction diodes were produced using a supercritical water deposition process. Pulse height spectroscopy was conducted on the novel diodes while they were subjected to a moderated plutonium-beryllium (PuBe) source flux of 10⁴ thermal neutrons/cm² s. Coincident gamma spectroscopy was employed to verify the 1107.6 keV photon emissions from the diode indicative of successful neutron capture by Gd-157 and the subsequent de-excitation of the Gd-158m nucleus. Neutron capture in the diodes could not be confirmed experimentally. The diodes were found to be sensitive to gamma rays between 10 and 20 keV.

AFIT Designator

AFIT-GNE-ENP-10M-10

DTIC Accession Number

ADA516418

Recommended Citation

Young, Christopher M., "Gadolinium Oxide/Silicon Thin Film Heterojunction Solid-State Neutron Detector" (2010). Theses and Dissertations. 2185.
https://scholar.afit.edu/etd/2185