Date of Award
3-11-2011
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
Department
Department of Engineering Physics
First Advisor
Yung K. Yeo, PhD.
Abstract
A new method to determine semiconductor bandgap energy directly from the easily measured transmission spectra was developed. The method was verified using many binary semiconductors with known properties and utilized to determine the unknown ternary semiconductors were determined at various wavelengths and temperatures. Photoluminescence and Hall-effect measurement were performed to identify various electronic transitions, as well as sample quality. The determination of electrical and optical properties of the material will provide important addition to the database of material properties for future optoelectronic device applications. In the near future, newer materials and their applications need to be developed, and often binary and ternary III-V compounds (GaSb, GaP, GaSbP etc.) can be studied using the method developed in this work.
AFIT Designator
AFIT-DS-ENP-11-M02
DTIC Accession Number
ADA538250
Recommended Citation
Wei, Jean W., "Optical and Electrical Characterization Melt-grown Bulk InGaAs and InAsP" (2011). Theses and Dissertations. 1479.
https://scholar.afit.edu/etd/1479