Document Type
Article
Publication Date
3-28-2024
Abstract
Ferroelectricity in hafnium zirconium oxide (Hf1−xZrxO2) and the factors that impact it have been a popular research topic since its discovery in 2011. Although the general trends are known, the interactions between fabrication parameters and their effect on the ferroelectricity of Hf1−xZrxO2 require further investigation. In this paper, we present a statistical study and a model that relates Zr concentration (x), film thickness (tf), and annealing temperature (Ta) with the remanent polarization (Pr) in tungsten (W)-capped Hf1−xZrxO2. This work involved the fabrication and characterization of 36 samples containing multiple sets of metal-ferroelectric-metal capacitors while varying x (0.26, 0.48, and 0.57), tf (10 and 19 nm), and Ta (300, 400, 500, and 600 °C). In addition to the well-understood effects of x and Ta on the ferroelectricity of Hf1−xZrxO2, the statistical analysis showed that thicker Hf1−xZrxO2 films or films with higher x require lower Ta to crystallize and demonstrated that there is no statistical difference between samples annealed to 500 and 600 °C, thus suggesting that most films fully crystallize with Ta ∼ 500 °C for 60 s. Our model explains 95% of the variability in the Pr data for the films fabricated, presents the estimates of the phase composition of the film, and provides a starting point for selecting fabrication parameters when a specific Pr is desired.
Source Publication
Journal of Applied Physics
Recommended Citation
Salcedo, G. A., Islam, A. E., Reichley, E., Dietz, M., Schubert-Kabban, C. M., Leedy, K. D., Back, T. C., Wang, W., Green, A., Wolfe, T., & Sattler, J. M. (2024). Effect of fabrication parameters on the ferroelectricity of hafnium zirconium oxide films: A statistical study. Journal of Applied Physics, 135(12), 124101. https://doi.org/10.1063/5.0191420
Included in
Electronic Devices and Semiconductor Manufacturing Commons, Engineering Physics Commons, Semiconductor and Optical Materials Commons
Comments
© 2024 Author(s). All article content, except where otherwise noted, is distributed under the terms of the Creative Commons Attribution-NonCommercial 4.0 License, which permits non-commercial use, reproduction and distribution of the work without further permission provided the original work is attributed. CC BY-NC 4.0
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Funding note: This work was supported, in part, by the Air Force Office of Scientific Research (AFOSR) with Laboratory Research Initiation Request (LRIR) under Grant No. 23RXCOR022 and by the Air Force Research Laboratory Corporate Venture Fund.