Date of Award
Master of Science in Nuclear Engineering
Department of Engineering Physics
Paul Ostdiek, PhD
Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide (RNO) MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a 60Co source, up to 1 Mrad(Si) at a dose rate of 107 rads(Si)-sec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of the thermal oxide devices. The threshold voltage shifts of the RNO devices were typically less than those for thermal oxide devices.
DTIC Accession Number
Daul, Kevin J., "Total Ionizing Dose Effects in MOSFET Devices at 77 K" (1994). Theses and Dissertations. 6359.