Date of Award
Master of Science
Department of Engineering Physics
David E. Weeks, PhD
Si/Si1-xGex MQW Infrared Photodetectors offer the promise of normal incidence photodetection tunable over the range of 3-12 micrometers wavelength range at temperatures above 40 K. This system is attractive because the Si1-xGex offers greater compatibility with existing Si based signal processing circuitry. Band structures, momentum matrix elements and linear absorption coefficients are computed using a Luftinger-Kohn k/p analysis for Si/Si1-xGex quantum wells grown in the 110 direction. The absorption coefficient as a function of energy and wavelength is calculated by two methods: a delta function fit to intersubband transitions, and a Lorentzian fit to intersubband transitions. Calculations were performed for parallel as well as normally incident radiation and the resulting absorption spectra are in good agreement with experimental observations.
DTIC Accession Number
Greene, Kevin D., "Theoretical Modeling of Linear Absorption Coefficients in Si/Si1-xGex Multiple Quantum Well Photodetectors" (1996). Theses and Dissertations. 5837.