Measurement of Ultrafast Carrier Recombination Dynamics in Mid-Infrared Semiconductor Laser Material
Date of Award
Doctor of Philosophy (PhD)
Department of Engineering Physics
Robert L. Hengehold, PhD
Shockley-Read-Hall, radiative, and Auger recombination rates in mid-infrared laser structures are measured and reported using time resolved photoluminescence (TRPL) frequency upconversion. The mid-IR lasers studied were actual InAsSb/InAlAsSb multiple-quantum-well (MQW) diode lasers emitting near 3.3 micrometers which were previously characterized for laser performance. This effort extends the initial studies and reports on the carrier recombination dynamics. Shockley-Read-Hall, radiative and Auger recombination rates at low temperature (77 K) were measured and found to be ASRH ≈ 10 x 107sec-1, Brad ≈ 2 x 10-10 cm3sec-1 and CAuger < 10-29 cm6sec-1 respectively, for each sample measured. At higher temperatures (150 K), the recombination rates were measured to be ASRH ≈ 40 x 107sec-1 Brad ≈ 0.78 x 10-10 cm3sec-1 and CAuger <7.0 x 10-28 cm6s-1 respectively. The Auger coefficient reported here is significantly lower than previous reports on similar material from both theoretical and experimental investigations. This has significant implications for mid-IR laser research, in that Auger may not be the limiting problem.
DTIC Accession Number
Cooley, William T., "Measurement of Ultrafast Carrier Recombination Dynamics in Mid-Infrared Semiconductor Laser Material" (1997). Theses and Dissertations. 5798.