Date of Award
Master of Science
Department of Engineering Physics
Yung Kee Yeo, PhD
Recently, research on the wide bandgap semiconductors such as GaN and Al(x)Ga(1-x)N became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted AlxGa1-xN, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.
DTIC Accession Number
Claunch, Erin N., "Luminescence Studies of ION-Implanted Gallium Nitride and Aluminum Gallium Nitride" (2003). Theses and Dissertations. 4163.