Luminescence Studies of ION-Implanted Gallium Nitride and Aluminum Gallium Nitride

Author

Erin N. Claunch

Date of Award

3-12-2003

Document Type

Thesis

Degree Name

Master of Science

Department

Department of Engineering Physics

First Advisor

Yung Kee Yeo, PhD

Abstract

Recently, research on the wide bandgap semiconductors such as GaN and Al(x)Ga(1-x)N became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted Al_xGa_1-xN, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.

AFIT Designator

AFIT-GAP-ENP-03-02

DTIC Accession Number

ADA413035

Recommended Citation

Claunch, Erin N., "Luminescence Studies of ION-Implanted Gallium Nitride and Aluminum Gallium Nitride" (2003). Theses and Dissertations. 4163.
https://scholar.afit.edu/etd/4163