Low Temperature Hall Measurements of Neutron Irradiated Silicon Carbide

Author

Angelo M. Bonavita

Date of Award

3-19-2004

Document Type

Thesis

Degree Name

Master of Science

Department

Department of Engineering Physics

First Advisor

James C. Petrosky, PhD

Abstract

The purpose of this research was to search for evidence of low temperature annealing from neutron irradiated 4H-silicon carbide. No features suggesting annealing were found below a temperature of 340K. Temperature dependant Hall effect measurements were taken over a range of 100K to 340K recording resistivity, carrier densities, and mobility. Resistivity was noted to increase with irradiations, and carrier densities appeared to decrease, while mobility appeared minimally affected by neutron irradiation. This suggests the creation of active acceptor defects decreasing carrier concentrations. N-type samples measured were 5mm x 5mm square with Nickel contacts, and irradiated to 10¹⁰ and 10¹⁶ n-cm/cm³ of 1MeV equivalent neutron fluence. Suggestions for continuing research include using a probe station instead of wire connections to samples, use a large source current to minimize variance, and minimize cadmium shielding to reduce negative reactivity.

AFIT Designator

AFIT-GNE-ENP-04-01

DTIC Accession Number

ADA423131

Recommended Citation

Bonavita, Angelo M., "Low Temperature Hall Measurements of Neutron Irradiated Silicon Carbide" (2004). Theses and Dissertations. 4114.
https://scholar.afit.edu/etd/4114