Date of Award
Master of Science
Department of Engineering Physics
Michael R. Hogsed, PhD.
The radiation response of 2 nm and 12 nm hexagonal boron nitride (hBN) thin film insulators was studied using metal insulator semiconductor (MIS) devices. Current-voltage, capacitance-voltage, and impedance spectroscopy measurements were compared to quantify changes in hBN resistance due to radiation damage. MIS devices exposed to a gamma total dose deposition of 3.1 Mrad(Si) from a Co- 60 source exhibited a small increase in hBN resistance and no observable C-V shift associated with charge trapping. MIS devices irradiated with 4.5 MeV silicon ions showed no significant resistivity decrease to a threshold fluence of 1 ×1012 for the 2 nm sample and 5 ×1012 ions/cm2 for the 12 nm sample, beyond which both devices exhibited hard dielectric breakdown. This result suggests a correlation between threshold ion fluence and a thickness dependent critical density of displacement defects. Conduction mechanism fitting showed a transition from electrode limited conduction to bulk limited conduction mechanisms at threshold ion fluence in both the 2 nm and 12 nm hBN samples, however, this result is inconclusive and requires further research.
DTIC Accession Number
Kaminski, Nathaniel M., "Radiation Effects in Thin Film Hexagonal Boron Nitride" (2016). Theses and Dissertations. 340.