Date of Award
Master of Science
Department of Engineering Physics
Michael A. Marciniak, PhD
Mid-Wave Infrared (MWIR) semiconductors are of use to the Air Force for several applications. Ultrafast spectroscopy can be used to better quantify the effectiveness of semiconductor opto-electronic devices. The objective of this thesis was to improve the procedure for taking ultrafast, time-resolved measurements of photoluminescence from MWIR semiconductors. Previous work has used a mode-locked titanium sapphire (Ti:Saph) laser to excite the semiconductor sample and to upconvert the photoluminescence from the semiconductor. Work completed in this thesis improved on the techniques developed during previous work. A synchronous Optical Parameter Oscillator (OPO) will be used to convert the Ti:Saph laser (0.830 µm) into 1.3-µm signal and 2.3-µm idler beams. Whereas the Ti:Saph reference and signal beams were too energetic to excite the quantum well (QW) layers of certain MWIR opto-electronic semiconductor structures, the synchronous OPO allows investigation of the active layer by directly exciting the QWs. Photoluminescence was detected from an indium arsenide antimonide (InAsSb) sample with a peak wavelength of 3.8 µm. A detailed procedure for setup of the TRPL experiment using the synchronous OPO is provided.
DTIC Accession Number
Derbis, Richard M., "Ultrafast Spectroscopy of Mid-Infrared Semiconductors Using the Signal and Idler Beams of a Synchronous Optical Parametric Oscillator" (2008). Theses and Dissertations. 2714.