Part of the Engineering Commons
Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point, Mee-Yi Ryu, Thomas R. Harris, Buguo Wang, Yung Kee Yeo, Michael R. Hogsed, Sang Jo Lee, Jong Su Kim, John Kouvetakis Faculty Publications
Link
Direct Bandgap Cross-over Point of Ge1-ySny Grown on Si Estimated through Temperature-dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne Faculty Publications
PDF
A Systematic Study of the Optical and Electrical Properties of Ge1-ySny and Ge1-x-ySixSny Semiconductor Alloys, Thomas R. Harris Theses and Dissertations
Degenerate Parallel Conducting Layer and Conductivity Type Conversion Observed from p-Ge1 - ySny (y = 0.06%) Grown on n-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis Faculty Publications
Worldwide Uncertainty Assessments of Ladar and Radar Signal-To-Noise Ratio Performance for Diverse Low Altitude Atmospheric Environments, Steven T. Fiorino, Richard J. Bartell, Matthew J. Krizo, Gregory Caylor, Kenneth P. Moore, Thomas R. Harris, Salvatore Cusumano Faculty Publications
Optical Properties of Si, Ge, GaAs, GaSb, InAs, and InP at Elevated Temperatures, Thomas R. Harris Theses and Dissertations
Advanced Search