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Part of the Engineering Commons

Works by Thomas R. Harris in Engineering

2019

Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point, Mee-Yi Ryu, Thomas R. Harris, Buguo Wang, Yung Kee Yeo, Michael R. Hogsed, Sang Jo Lee, Jong Su Kim, John Kouvetakis
Faculty Publications

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2016

Direct Bandgap Cross-over Point of Ge1-ySny Grown on Si Estimated through Temperature-dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Faculty Publications

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2014

A Systematic Study of the Optical and Electrical Properties of Ge1-ySny and Ge1-x-ySixSny Semiconductor Alloys, Thomas R. Harris
Theses and Dissertations

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2012

Degenerate Parallel Conducting Layer and Conductivity Type Conversion Observed from p-Ge1 - ySny (y = 0.06%) Grown on n-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis
Faculty Publications

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2010

Worldwide Uncertainty Assessments of Ladar and Radar Signal-To-Noise Ratio Performance for Diverse Low Altitude Atmospheric Environments, Steven T. Fiorino, Richard J. Bartell, Matthew J. Krizo, Gregory Caylor, Kenneth P. Moore, Thomas R. Harris, Salvatore Cusumano
Faculty Publications

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Optical Properties of Si, Ge, GaAs, GaSb, InAs, and InP at Elevated Temperatures, Thomas R. Harris
Theses and Dissertations

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