Part of the Engineering Commons

Works by Mee-Yi Ryu in Engineering

2019

Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point, Mee-Yi Ryu, Thomas R. Harris, Buguo Wang, Yung Kee Yeo, Michael R. Hogsed, Sang Jo Lee, Jong Su Kim, John Kouvetakis
Faculty Publications

2016

Direct Bandgap Cross-over Point of Ge1-ySny Grown on Si Estimated through Temperature-dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Faculty Publications

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2012

Degenerate Parallel Conducting Layer and Conductivity Type Conversion Observed from p-Ge1 - ySny (y = 0.06%) Grown on n-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis
Faculty Publications

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2011

Complementary Metal-oxide Semiconductor-compatible Detector Materials with Enhanced 1550 nm Responsivity via Sn-doping of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Faculty Publications

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2008

Magnetic Properties of Transition Metal-Implanted Zno Nanotips Grown On Sapphire and Quartz, Jeremy A. Raley, Yung-Kee Yeo, Robert L. Hengehold, Mee-Yi Ryu, Pan Wu
Faculty Publications