Temperature-Dependent Photoluminescence Studies of Ge_1−ySn_y (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point, Mee-Yi Ryu, Thomas R. Harris, Buguo Wang, Yung Kee Yeo, Michael R. Hogsed, Sang Jo Lee, Jong Su Kim, John Kouvetakis
Faculty Publications

Degenerate Parallel Conducting Layer and Conductivity Type Conversion Observed from p-Ge_{1 - y}Sn_y (y = 0.06%) Grown on n-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis
Faculty Publications

Complementary Metal-oxide Semiconductor-compatible Detector Materials with Enhanced 1550 nm Responsivity via Sn-doping of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Faculty Publications