Part of the Engineering Commons

Works by Buguo Wang in Engineering

2019

Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point, Mee-Yi Ryu, Thomas R. Harris, Buguo Wang, Yung Kee Yeo, Michael R. Hogsed, Sang Jo Lee, Jong Su Kim, John Kouvetakis
Faculty Publications

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2016

Direct Bandgap Cross-over Point of Ge1-ySny Grown on Si Estimated through Temperature-dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Faculty Publications

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