Radiation-induced Electron and Hole Traps in Ge_1-xSn_x (x = 0-0.094), Michael R. Hogsed, Kevin Choe, Norman Miguel, Buguo Wang, John Kouvetakis
Faculty Publications

Temperature-Dependent Photoluminescence Studies of Ge_1−ySn_y (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point, Mee-Yi Ryu, Thomas R. Harris, Buguo Wang, Yung Kee Yeo, Michael R. Hogsed, Sang Jo Lee, Jong Su Kim, John Kouvetakis
Faculty Publications

Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy, Michael R. Hogsed
Theses and Dissertations