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Radiation-induced Electron and Hole Traps in Ge1-xSnx (x = 0-0.094), Michael R. Hogsed, Kevin Choe, Norman Miguel, Buguo Wang, John Kouvetakis Faculty Publications
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Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point, Mee-Yi Ryu, Thomas R. Harris, Buguo Wang, Yung Kee Yeo, Michael R. Hogsed, Sang Jo Lee, Jong Su Kim, John Kouvetakis Faculty Publications
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