Temperature-Dependent Photoluminescence Studies of Ge_1−ySn_y (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point, Mee-Yi Ryu, Thomas R. Harris, Buguo Wang, Yung Kee Yeo, Michael R. Hogsed, Sang Jo Lee, Jong Su Kim, John Kouvetakis
Faculty Publications

Direct Bandgap Cross-over Point of Ge_1-ySn_y Grown on Si Estimated through Temperature-dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Faculty Publications

Observation of Temperature-dependent Heavy- and Light-hole Split Direct Bandgap and Tensile Strain from Ge_0.985Sn_0.015 using Photoreflectance Spectroscopy, Hyun-Jun Jo, Geun Hyeong Kim, Jong Su Kim, Mee-Yi Ryu, Yung Kee Yeo, Thomas R. Harris, John Kouvetakis
Faculty Publications

Observation of Heavy- and Light-hole Split Direct Bandgap Photoluminescence from Tensile-strained GeSn (0.03% Sn), Thomas R. Harris, Yung Kee Yeo, Mee-Yi Ryu, Richard T. Beeler, John Kouvetakis
Faculty Publications

Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySn y/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content, Mee-Yi Ryu, Thomas R. Harris, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis
Faculty Publications

Degenerate Parallel Conducting Layer and Conductivity Type Conversion Observed from p-Ge_{1 - y}Sn_y (y = 0.06%) Grown on n-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis
Faculty Publications