Temperature-Dependent Photoluminescence Studies of Ge_1−ySn_y (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point, Mee-Yi Ryu, Thomas R. Harris, Buguo Wang, Yung Kee Yeo, Michael R. Hogsed, Sang Jo Lee, Jong Su Kim, John Kouvetakis
Faculty Publications

Direct Bandgap Cross-over Point of Ge_1-ySn_y Grown on Si Estimated through Temperature-dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Faculty Publications

Observation of Temperature-dependent Heavy- and Light-hole Split Direct Bandgap and Tensile Strain from Ge_0.985Sn_0.015 using Photoreflectance Spectroscopy, Hyun-Jun Jo, Geun Hyeong Kim, Jong Su Kim, Mee-Yi Ryu, Yung Kee Yeo, Thomas R. Harris, John Kouvetakis
Faculty Publications

Observation of Heavy- and Light-hole Split Direct Bandgap Photoluminescence from Tensile-strained GeSn (0.03% Sn), Thomas R. Harris, Yung Kee Yeo, Mee-Yi Ryu, Richard T. Beeler, John Kouvetakis
Faculty Publications

Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySn y/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content, Mee-Yi Ryu, Thomas R. Harris, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis
Faculty Publications

Degenerate Parallel Conducting Layer and Conductivity Type Conversion Observed from p-Ge_{1 - y}Sn_y (y = 0.06%) Grown on n-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis
Faculty Publications

Worldwide Assessments of Laser Radar Tactical Scenario Performance Variability for Diverse Low Altitude Atmospheric Conditions at 1.0642 μm and 1.557 μm, Steven T. Fiorino, Richard J. Bartell, Matthew J. Krizo, Daniel J. Fedyk, Kenneth Moore, Thomas R. Harris, Salvatore J. Cusumano, Richard J. Richmond, Matthew J. Gebhardt
Faculty Publications