Observation of Heavy- and Light-hole Split Direct Bandgap Photoluminescence from Tensile-strained GeSn (0.03% Sn), Thomas R. Harris, Yung Kee Yeo, Mee-Yi Ryu, Richard T. Beeler, John Kouvetakis
Faculty Publications

Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySn y/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content, Mee-Yi Ryu, Thomas R. Harris, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis
Faculty Publications

Degenerate Parallel Conducting Layer and Conductivity Type Conversion Observed from p-Ge_{1 - y}Sn_y (y = 0.06%) Grown on n-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis
Faculty Publications

Complementary Metal-oxide Semiconductor-compatible Detector Materials with Enhanced 1550 nm Responsivity via Sn-doping of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Faculty Publications