Date of Award

12-1991

Document Type

Thesis

Degree Name

Master of Science

Department

Department of Engineering Physics

First Advisor

James D. Targove, PhD

Abstract

In this study, hydrogenated amorphous silicon carbide thin films were deposited by reactive ion-beam sputtering under varying conditions to determine whether a film's optical properties can be controlled, focusing on refractive index. Using a Kaufman type ion source to sputter a pure silicon target, three distinct series of films were grown. The first series varied the mixture of methane and argon used in the ion-beam. holding all other parameters constant. For the second series the gas mix was fixed, and only the beam energy (beam voltage) was varied. The final series also varied beam energy, but was grown with a graphite shield next to the target to reduce metal contamination sputtered from chamber surfaces. Results show the index of refraction increased monotonically with beam energy up to a beam voltage of 1300 volts. Both the second and third series of films followed this trend, but analysis of differences in atomic composition between two series revealed opposite trends for how the silicon to carbon content ratio and refractive index were related. More precise control of the gas flow, and sputtering from only the intended (silicon) target would have reduced experimental errors.

AFIT Designator

AFIT-GEP-ENP-91D-7

DTIC Accession Number

ADA243970

Comments

The author's Vita page is omitted.

Download

Share

COinS